In this paper, we have proposed a Si-Ge HBT Using Silvaco TCAD. In recent years, the band gap engineered devices have received considerable attention due to their inherent advantages such as high speed and high driving capability as compared to homo junction devices. The Si-Ge Hetero junction Bipolar Transistor (HBT) is the first band gap engineered device to be developed on Si. The recent advancement in material growth technology and device design has resulted in Si-Ge HBT’s operating at more than 250GHz cutoff frequency. The present paper deals with the simulation of Si-Ge HBT structures using Silvaco TCAD. HBT structure has been generated through DevEdit and device simulation was carried out using Atlas. Base width and Ge profile are very important parameter for HBT. In view of this, the effect of variation of base width and Ge profile on the parameters like Collector Current (Ic), Current Gain (β), fT and fmax has been studied.

HBT, Bipolar Junction Transistor, DEVEDIT 2D, Silvaco TCAD

[1] Joseph, A.; Lanzerotti, L.; Sheridan D.; Johnson, J.; Liu, Q.; Dunn, J.; Rieh, J.-S.; Harame, D., “ Advances in Si-Ge HBT BiCMOS Technology,” Silicon Monolithic Integrated Circuits in RF Systems, PP. 1-4, 2004.
[2] Persson, S.; Fjer, M.; Escobedo-Cousin, E.; Olsen, S.H.; Malm, B.G.; Yong-Bin Wang; Hellstro; Stling, M.; O,Neill, A.G., “ Strained-Silicon Heterojunction Bipolar Transistor,” IEEE Transaction on Electronics Devices Volume 57, PP. 1243-1250, June 2010.
[3] Peter Ashburn, “Si-Ge Heterojunction Bipolar Transistor”s, John Wiley & Sons Ltd., 2003.
[4] Silvaco ATLAS manual, Dec.7, 2006.
[5] Cressler J.D., Niu, G., “Silicon Germanium Heterojunction Bipolar Transistor”, Artech House Inc., 2003.
[6] Armstrong, G.A. and Maiti,C.K., “Technology for Computer Aided Design for Si, Si-Ge and GaAs Integrated Circuits”, The Institution of Engineering and Technology, PP. 208-209, 2007.
[7] Hamed, Ghodsi; Hassan, Kaatuzian, “Physical Characteristics Modification of a Si- Ge Semiconductor Device for Performance Improvement In A Terahertz Detecting System” Journal of Semiconductors, Vol. 36, No.-5, May 2015.
[8] C. K. Maiti and G.A. Armstrong, “Applications of Silicon Germanium Hetero structure Devices,” Inst. of Physics Lab., 2001.
[9] Adel S. Sendra and Kenneth C. Smith, “Microelectronics Circuits,” 5th Edition, Oxford University Press, , PP. 382-383. 2004.
[10] Silvaco Dev Edit Mannual, March 1, 2006.
[11] Mathur, N.; Todorova, D.; Roenker, K.P., “Parasitic Barrier Effects in Si-Ge HBT’s Due to p-n Junction Displacement,” Accepted toTtopicalMmeeting on Silicon Monolithic Integrated Circuits in RF Systems, PP. 177-186, Sept. 2001.
[12] Reonker, K.P.; Alterovitz, S.A.; Mueller, C.H., “ Device Physics Analysis of Parasitic Conduction Band Barrier Formation in Si-Ge HBTs” Silicon Monolithic Integrated Circuits in RF systems, PP.182-186, April 2000.
[13] Jagannathan, B.; Khater, M.; Pagette, F.; Rieh, J.-S.; Angell, D.; Chen, H.; Florkey, J.; Golan, F.; Greenberg, D.R.; Groves, R.; Jeng, S.J.; Johnson, J.; Mengistu, E.; Schonenberg, K.T.; Schnabel, C.M.; Smith, P.; Stricker, A.; Ahlgren, D.; Freeman, G.; Stein, K.; Subbanna, S., “ Self Aligned Si-Ge NPN Transistors With 285 GHz fMAX And 207 GHz fT in a Manufacturable Technology,” IEEE Electron Device Letters, Volume 23, PP. 258-260, May 2002.