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A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices

Manuj Kumar Agarwal1 , Manish Saxena2 , Shilpa Gupta3

Section:Research Paper, Product Type: Journal Paper
Volume-6 , Issue-12 , Page no. 943-947, Dec-2018

CrossRef-DOI:   https://doi.org/10.26438/ijcse/v6i12.943947

Online published on Dec 31, 2018

Copyright © Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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IEEE Style Citation: Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta, “A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices,” International Journal of Computer Sciences and Engineering, Vol.6, Issue.12, pp.943-947, 2018.

MLA Style Citation: Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta "A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices." International Journal of Computer Sciences and Engineering 6.12 (2018): 943-947.

APA Style Citation: Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta, (2018). A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices. International Journal of Computer Sciences and Engineering, 6(12), 943-947.

BibTex Style Citation:
@article{Agarwal_2018,
author = {Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta},
title = {A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices},
journal = {International Journal of Computer Sciences and Engineering},
issue_date = {12 2018},
volume = {6},
Issue = {12},
month = {12},
year = {2018},
issn = {2347-2693},
pages = {943-947},
url = {https://www.ijcseonline.org/full_paper_view.php?paper_id=3444},
doi = {https://doi.org/10.26438/ijcse/v6i12.943947}
publisher = {IJCSE, Indore, INDIA},
}

RIS Style Citation:
TY - JOUR
DO = {https://doi.org/10.26438/ijcse/v6i12.943947}
UR - https://www.ijcseonline.org/full_paper_view.php?paper_id=3444
TI - A Study on Optical Parameters of Ge-Se-Te Thin Film for Optical Storage Devices
T2 - International Journal of Computer Sciences and Engineering
AU - Manuj Kumar Agarwal, Manish Saxena, Shilpa Gupta
PY - 2018
DA - 2018/12/31
PB - IJCSE, Indore, INDIA
SP - 943-947
IS - 12
VL - 6
SN - 2347-2693
ER -

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Abstract

The chalcogenide glasses have recently been investigated intensively because of their promising technological applications in reversible phase change optical recording. Recently, there is a trend of using amorphous materials, rather than carefully prepared crystalline semiconductors, in much needed investigation of such chalcogenide based materials. The present study examines the impact of germanium (Ge) content variation on the optical properties of GexSe50Te50-x (x = 10, 20, 30, 40 at %) based thin films. The optical absorption estimations were performed at room temperature with the change in wavelength. Numerous optical constants were also studied for the concentrated thin films using the optical absorption information in transmission spectra. It was observed that the optical absorption mechanism follow the rule of the allowed direct transition. The theoretical band gap was found to decrease as the Ge content (%) increases from 10 to 40 at %. This outcome was clarified regarding the compound bond approach and hence shows usefulness for optical recording devices.

Key-Words / Index Term

Absorption coefficient, extinction coefficient, theoretical energy band gap, refractive index

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