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A Study on Physical Parameters of Pb-Se-Te-Bi System for Optical Memory Devices

Shilpa Gupta1 , Manuj Kumar Agarwal2 , Manish Saxena3

Section:Research Paper, Product Type: Journal Paper
Volume-7 , Issue-2 , Page no. 715-719, Feb-2019

CrossRef-DOI:   https://doi.org/10.26438/ijcse/v7i2.715719

Online published on Feb 28, 2019

Copyright © Shilpa Gupta, Manuj Kumar Agarwal, Manish Saxena . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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IEEE Style Citation: Shilpa Gupta, Manuj Kumar Agarwal, Manish Saxena, “A Study on Physical Parameters of Pb-Se-Te-Bi System for Optical Memory Devices,” International Journal of Computer Sciences and Engineering, Vol.7, Issue.2, pp.715-719, 2019.

MLA Style Citation: Shilpa Gupta, Manuj Kumar Agarwal, Manish Saxena "A Study on Physical Parameters of Pb-Se-Te-Bi System for Optical Memory Devices." International Journal of Computer Sciences and Engineering 7.2 (2019): 715-719.

APA Style Citation: Shilpa Gupta, Manuj Kumar Agarwal, Manish Saxena, (2019). A Study on Physical Parameters of Pb-Se-Te-Bi System for Optical Memory Devices. International Journal of Computer Sciences and Engineering, 7(2), 715-719.

BibTex Style Citation:
@article{Gupta_2019,
author = {Shilpa Gupta, Manuj Kumar Agarwal, Manish Saxena},
title = {A Study on Physical Parameters of Pb-Se-Te-Bi System for Optical Memory Devices},
journal = {International Journal of Computer Sciences and Engineering},
issue_date = {2 2019},
volume = {7},
Issue = {2},
month = {2},
year = {2019},
issn = {2347-2693},
pages = {715-719},
url = {https://www.ijcseonline.org/full_paper_view.php?paper_id=3732},
doi = {https://doi.org/10.26438/ijcse/v7i2.715719}
publisher = {IJCSE, Indore, INDIA},
}

RIS Style Citation:
TY - JOUR
DO = {https://doi.org/10.26438/ijcse/v7i2.715719}
UR - https://www.ijcseonline.org/full_paper_view.php?paper_id=3732
TI - A Study on Physical Parameters of Pb-Se-Te-Bi System for Optical Memory Devices
T2 - International Journal of Computer Sciences and Engineering
AU - Shilpa Gupta, Manuj Kumar Agarwal, Manish Saxena
PY - 2019
DA - 2019/02/28
PB - IJCSE, Indore, INDIA
SP - 715-719
IS - 2
VL - 7
SN - 2347-2693
ER -

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Abstract

The Chalcogenide glasses, in last couple of decades, have got a lot of attention because of their promising potential in studies of phase change optical storage media as well as due to interesting structural, physical, electrical, optical and thermal parameters. However, there is a general trend of using some amorphous materials instead of even very carefully prepared crystalline materials, in much needed investigation of such useful chalcogenide based materials. In the present study, the impact of bismuth (Bi) concentration variation on some important physical properties of Pb10Se80-xTe10Bix (x=2, 4, 6, 8, 10, 12, 14, 16 at. %) glassy alloys has been investigated theoretically. Almost all the parameters, studied here, have been found to vary linearly with increase in Bi concentration, thus making this suitable for phase change optical recording and find applications in rewritable optical recording storage media.

Key-Words / Index Term

Chalcogenide Glasses, Average Coordination Number, Lone pair, Mean Bond Energy, Glass Transition Temperature

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