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GaN channel Nanoscale MOSFET with Silicon Source and Drain and Silicon Germanium Bulk

Basab Das1

Section:Research Paper, Product Type: Journal Paper
Volume-04 , Issue-07 , Page no. 140-143, Dec-2016

Online published on Dec 09, 2016

Copyright © Basab Das . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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IEEE Style Citation: Basab Das, “GaN channel Nanoscale MOSFET with Silicon Source and Drain and Silicon Germanium Bulk,” International Journal of Computer Sciences and Engineering, Vol.04, Issue.07, pp.140-143, 2016.

MLA Style Citation: Basab Das "GaN channel Nanoscale MOSFET with Silicon Source and Drain and Silicon Germanium Bulk." International Journal of Computer Sciences and Engineering 04.07 (2016): 140-143.

APA Style Citation: Basab Das, (2016). GaN channel Nanoscale MOSFET with Silicon Source and Drain and Silicon Germanium Bulk. International Journal of Computer Sciences and Engineering, 04(07), 140-143.

BibTex Style Citation:
@article{Das_2016,
author = {Basab Das},
title = {GaN channel Nanoscale MOSFET with Silicon Source and Drain and Silicon Germanium Bulk},
journal = {International Journal of Computer Sciences and Engineering},
issue_date = {12 2016},
volume = {04},
Issue = {07},
month = {12},
year = {2016},
issn = {2347-2693},
pages = {140-143},
url = {https://www.ijcseonline.org/full_spl_paper_view.php?paper_id=171},
publisher = {IJCSE, Indore, INDIA},
}

RIS Style Citation:
TY - JOUR
UR - https://www.ijcseonline.org/full_spl_paper_view.php?paper_id=171
TI - GaN channel Nanoscale MOSFET with Silicon Source and Drain and Silicon Germanium Bulk
T2 - International Journal of Computer Sciences and Engineering
AU - Basab Das
PY - 2016
DA - 2016/12/09
PB - IJCSE, Indore, INDIA
SP - 140-143
IS - 07
VL - 04
SN - 2347-2693
ER -

           

Abstract

Extensive scaling in Conventional MOSFETs lead to degradation to their electrical parameters. This work proposes a GaN channel Nanoscale MOSFET for improvement in Electron Mobility, Off current with satisfactory On current, Threshold voltage and Subthreshold Swing Off current of the order of 10-11 A/um and Electron Mobility of around 1300 cm2/ V-s are obtained.

Key-Words / Index Term

MOSFET, GaN, Silicon Germanium, On-Off current ratio, mobility

References

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