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| Nano- Wire structure optimization to achieve high sensibility and frequency response | ||
| M.R. Ghahri1 , S. SheikhHasani2 | ||
| Section:Research Paper, Product Type: Journal Paper Volume-5 , Issue-3 , Page no. 16-19, Mar-2017 Online published on Mar 31, 2017 |
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| Copyright © M.R. Ghahri, S. SheikhHasani . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
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| Citation |
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IEEE Style Citation: M.R. Ghahri, S. SheikhHasani, “Nano- Wire structure optimization to achieve high sensibility and frequency response”, International Journal of Computer Sciences and Engineering, Vol.5, Issue.3, pp.16-19, 2017. MLA Style Citation: M.R. Ghahri, S. SheikhHasani "Nano- Wire structure optimization to achieve high sensibility and frequency response." International Journal of Computer Sciences and Engineering 5.3 (2017): 16-19. APA Style Citation: M.R. Ghahri, S. SheikhHasani, (2017). Nano- Wire structure optimization to achieve high sensibility and frequency response. International Journal of Computer Sciences and Engineering, 5(3), 16-19. |
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| Abstract : |
| In this paper the structure of Nano- Wire would be optimized to achieve high sensibility and frequency response. To perform this optimization, the length of Nano- Wire g region and the thickness of absorber layer will be optimized. Silvaco software is used for simulation and optimization. The proposed structure includes a window profile is used for Nano- Wire. |
| Key-Words / Index Term : |
| Nanowire, Doping, Grating |
| References : |
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[1] P.S. Menon, S. Kalthom Tasirin, Ibrahim Ahmad and S. Fazlili Abdullah, “Optimization of Process Parameters for Si Lateral NANO- WIRE Nanowire” World Applied Sciences Journal 21 (Mathematical Applications in Engineering): 98-103, 2013.
[2] Souza, M., O. Bulteel, D. Flandre and M.A. Pavanello. Temperature and silicon film thickness influence on the operation of lateral SOI NANO- WIRE Nanowires for detection of short wavelength, J.Integrated Circuits and Systems, 6(1): 107-113, 2011. [3] Ehsan, A.A., Shaari, S., Majlis, B.Y.(2001) Silicon Planar p-i-n Nanowire for OEIC. IEEE Nat’l. Symp. on Microelectronics:316. [4] Menon P.S., Ahmad M. H. F., Tugi A., Ehsan A. A. and Shaari S. (2003). Dark Current-Voltage(I-V) Characteristic of a Silicon NANO- WIRE Lateral Nanowire. IEEE National Symposium on Microelectronics : 207-210. [5] Menon P.S. and Shaari S. (2003). The Effectof Intrinsic Region Width Variance on the Responsivity and Current-Voltage(IV) Characteristics of a Silicon Lateral NANO- WIRE Nanowire. IMEN – Procs. on Photonics: Planar Waveguide and Fiber Based Opt. Comm.Dev. 1: 76-79. [6] Menon, P.S., Pembangunan diodfoto planar p-i-n silikon (Development of silicon-based p-i-n Nanowire), MSc Thesis. Universiti KebangsaanMalaysia, 2013. [7] Menon, P.S. and S. Shaari, 2005. Surface versus lateral illumination effects on an interdigitated Si planar NANO- WIRE Nanowire. Proceedings of the SPIE Symposium on Optics and Photonics: Infrared and Photoelectronic Imagers and Detector Devices, 2005, San Diego, USA, 5881: art. no. 58810S, pp: 1-8. [8] Jang, J.H., G. Cueva, D.C. Dumka, W.E. Hoke P.J. Lemonias and I. Adesida, 2001. Long-Wavelength In0.53Ga0.47As Metamorphic p-i-n Nanowire on GaAs Subtrates. IEEE Photonics Technology Letters, 3(2): |
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