Enhancement of External Quantum Efficiency of GaSb/GaAs solar cell Based on Graphene
|S. Shafie1 , M. Imanie2|
Section:Research Paper, Product Type: Journal Paper
Volume-5 , Issue-3 , Page no. 25-28, Mar-2017
Online published on Mar 31, 2017
Copyright © S. Shafie, M. Imanie . This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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IEEE Style Citation: S. Shafie, M. Imanie, “Enhancement of External Quantum Efficiency of GaSb/GaAs solar cell Based on Graphene”, International Journal of Computer Sciences and Engineering, Vol.5, Issue.3, pp.25-28, 2017.
MLA Style Citation: S. Shafie, M. Imanie "Enhancement of External Quantum Efficiency of GaSb/GaAs solar cell Based on Graphene." International Journal of Computer Sciences and Engineering 5.3 (2017): 25-28.
APA Style Citation: S. Shafie, M. Imanie, (2017). Enhancement of External Quantum Efficiency of GaSb/GaAs solar cell Based on Graphene. International Journal of Computer Sciences and Engineering, 5(3), 25-28.
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|The main limitations of the typical solar conversion device is that low energy photons cannot excite charge carriers to the conduction band, therefore do not contribute to the device’s current, and high energy photons are not efficiently used due to a poor match to the energy gap. Currently, Graphen based Solar Cells GBSC are one of the most active research fields in the third generation solar cells which can resolve this problem. In the present work, we are interested in modeling and simulating of both standard GaAs p-i-n solar cell and GaSb/GaAs Graphene Solar Cell. When comparing 40-layers GaSb/GaAs Graphene solar cell with standard GaAs solar cell, the conversion efficiency in simulation results increased from 16.48 % to 22.46 %, which is relatively 36.3% increase. Also, the absorption range edge of photons with low energies extended from 900 to 1200 nm. The results reveal that the GaSb/GaAs Graphene solar cell manifests much larger power conversion efficiency than that of p-i-n junction solar cells.|
|Key-Words / Index Term :|
|Solar Cell, Graphene, Grating|
 Pablo Garcia-Linares Fontes, “Research on Intermediate Bands Solar Cells and development of experimental techniques for their characterization under concentrated illumination”, Thesis Doctoral, Universidad Politécnica de Madrid, 2012.
 A.Luque, A. Marti, A.Nozik, "Solar cells based on quantum dots," MRS bulletin, 2007, 32:236-241.
 C.Bailey, "Optical and mechanical characterization of InAs/GaAs Graphene solar cells," a dissertation for the degree of Doctor of Philosophy, Rochester Institute of Technology, January, 2012.
 C.Bailey, S.Polly, R.Raffaelle, et al, "Open-circuit voltage enhancementment of InAs/GaAs graphen based Solar Cells using reduced InAs coverage," IEEE Journal of Photovoltaic, Vol.2, No.3, July 2012, 269-275.
 P. Michalopoulos, “A novel approach for the development and optimization of state-of-the-art photovoltaic devices using Silvaco,” M.S. Thesis, Naval Postgraduate School, Monterey, California, March 2002.
 D.J. Roulston, N.D. Arora, and S.G. Chamberlain, “Modeling and Measurement of Minority-Carrier Lifetime versus Doping in Diffused Layers of n ±p Silicon Diodes”, IEEE Trans. on Electron Devices, ED-29, Feb. 1982, p. 284-291.
 Boujdaria K, Ridene S and Fishman G 2001 Luttinger-like parameter calculation Phys. Rev. B 63 235302.
 Vurgaftman I and Meyer J R 2001 Band parameters for III–V compound semiconductors and their alloys J. Appl. Phys.
 MASETTI G., M.SEVERI, AND S.SOLMI, “Modeling of Carrier Mobility Against Carrier Concentration in Arsenic, Phosphorous and Boron doped Silicon”, IEEE Trans. Elec. Dev. ED-30, (1983): 764-769.